Compound semiconductor device including AIN layer of controlled skewness

ABSTRACT

A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. application Ser. No. 12/059,693filed on Mar. 31, 2008, now U.S. Pat. No. 8,044,492, which is based onand claims priority of Japanese Patent Application No. 2007-093574 filedon Mar. 30, 2007, the entire contents of which are incorporated hereinby reference.

BACKGROUND OF THE INVENTION

A) Field of the Invention

The present invention relates to a compound semiconductor epitaxialsubstrate, a compound semiconductor device and their manufacture method,and more particularly to a compound semiconductor epitaxial substrateand a compound semiconductor device having a nitride semiconductorlayer, and their manufacture method.

B) Description of the Related Art

GaN has a broad band gap of 3.4 eV and is a semiconductor expected forshort wavelength optical emission and high breakdown voltage operation.Optical emission devices for ultraviolet and blue light have beendeveloped. High voltage operation is required for a base stationamplifier of mobile phones. A value over 300 V is presently reported asa breakdown voltage during current-off. The best output characteristicsare obtained by using an SiC substrate. This is considered to beascribed to a high thermal conductivity of SiC. Physical characteristicssuch as a band gap are adjusted in group-III nitride mixed crystals. Forexample, AlN or InN is mixed in GaN. Ga_(x)Al_(y)In_(z)N (0≦x≦1,x+y+z=1) is herein called gallium nitride containing (GaN containing)semiconductor. Various epitaxial growth has been studied in order toform a group-III nitride semiconductor crystal layer of good quality.

JP-A-2003-309071 proposes that an AlN low temperature growth bufferlayer of 10 nm to 50 nm thick is grown on a crystal substrate such assapphire, SiC, GaN and AlN, e.g., a sapphire substrate, at a lowtemperature of 300° C. to 600° C., after the temperature is raised to,e.g, 1000° C. an Al_(x)Ga_(1-x)N (0<x≦1) underlying layer is grown onthe low temperature growth buffer layer, and an Al_(y)Ga_(1-y)N (0≦y<x)with a lower Al composition is grown on the underlying layer. Since theAlGaN film with a lower Al composition has a large lattice constant, acompressive stress is applied. It is described that a GaN layer and thelike of good quality can be obtained because dislocation is deflectedlaterally at a film interface. The device structure described is anultraviolet emission LED. When a multiquantum well structure is formed,a growth temperature is set to 800° C. for example.

JP-A-2005-32823, which is incorporated herein by reference, proposesthat when a field effect transistor epitaxial wafer is formed by growingan AlN buffer layer on an SiC substrate and growing a GaN or InGaNchannel layer and an AlGaN electron supply layer on the AlN bufferlayer, a growth temperature of the buffer layer is set higher by about100° C. than that for the channel layer, and a V/III ratio is loweredduring the growth to the extent that adhesion and release speeds of AlNreactive species become equal, preferably not smaller than 50 and notlarger than 500.

As the growth temperature is raised, AlN reactive species are activatedso that release become easy. As the V/III ratio is lowered, a growthspeed of the AlN buffer layer is suppressed low, and a state near anequilibrium state is formed in which AlN reactive species become easy tomove on the surface. Therefore, not only two-dimensional nucleation ispromoted but also a pit burying function is enhanced after the AlNcrystal film is formed. It is described that growth of an AlN bufferlayer with less detects can be realized. The AlN buffer layer is grownby MOCVD under the conditions of a furnace pressure of 135 Torr, a V/IIIratio of 230 and a growth temperature of 1150° C. to 1200° C. usingtrimethylaluminum (TMA) as Al source and NH₃ as nitrogen source. Agrowth speed is 0.2 nm/sec or slower. Thereafter, the temperature islowered to 1100° C., and other layers such as a high purity GaN layerare grown epitaxially.

JP-A-2006-165207, which is incorporated herein by reference, proposes ahigh electron mobility transistor (HEMT) of high breakdown voltage usingGaN containing semiconductor as a channel layer. For example, an i-typeGaN channel layer is grown above a high resistance SiC substrate, ann-type AlGaN layer and an n-type GaN cap layer are formed with an i-typeAlGaN spacer layer interposed therebetween, the n-type cap layer ispartially removed, Ta and Al are laminated to form source/drainelectrodes of ohmic electrodes through annealing at 510° C. or higherand lower than 600° C., an SiN layer is deposited, an opening is formedthrough the SiN layer, and a gate electrode contacting the GaN cap layeris formed in the opening.

SUMMARY OF THE INVENTION

According to one aspect of an embodiment, there is provided asemiconductor epitaxial substrate including:

a single crystal substrate; an AlN layer epitaxially grown on the singlecrystal substrate; and

a nitride semiconductor layer epitaxially grown on the AlN layer,

wherein an interface between the AlN layer and the nitride semiconductorlayer has a larger roughness than an interface between the singlecrystal substrate and the AlN layer.

According to another aspect of an embodiment, there is provided acompound semiconductor device including:

a single crystal substrate; an AlN layer epitaxially grown on the singlecrystal substrate;

a buffer layer of nitride semiconductor epitaxially grown on the AlNlayer;

a channel layer of nitride semiconductor epitaxially grown on the bufferlayer;

a carrier supply layer of nitride semiconductor epitaxially grown on thechannel layer; and

a source electrode, a drain electrode and a gate electrode formed abovethe carrier supply layer,

wherein an interface between the AlN layer and the buffer layer has alarger roughness than an interface between the single crystal substrateand the AlN layer.

According to further aspect of an embodiment, there is provided amanufacture method for a semiconductor epitaxial substrate including:

epitaxially growing an AlN layer on a single crystal substrate; and

epitaxially growing a nitride semiconductor layer on the AlN layer,

wherein growth conditions for the AlN layer are set in such a mannerthat an interface between the AlN layer and the nitride semiconductorlayer has a larger roughness than an interface between the singlecrystal substrate and the AlN layer.

According to still another aspect of an embodiment, there is provided amanufacture method for a compound semiconductor device including:

epitaxially growing an AlN layer on a single crystal substrate;

epitaxially growing a buffer layer of nitride semiconductor on the AlNlayer;

epitaxially growing a channel layer of nitride semiconductor on thebuffer layer;

epitaxially growing a carrier supply layer of nitride semiconductor onthe channel layer; and

forming a source electrode, a drain electrode and a gate electrode abovethe carrier supply layer,

wherein growth conditions for the AlN layer are set in such a mannerthat an interface between the AlN layer and the buffer layer has alarger roughness than an interface between the single crystal substrateand the AlN layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic cross sectional views showing thestructures of GaN containing HEMT's according to a first embodiment ofthe present invention and a comparative example.

FIGS. 2A and 2B are graphs showing a change in a drain current afterinterruption of an high frequency signal in samples according to thefirst embodiment and the comparative example, and FIG. 2C is a graphshowing leak current among integrated elements in the sample accordingto the first embodiment.

FIGS. 3A and 3B are images showing surface morphology of an area of 5μm×5 μm observed with an atomic force microscope, FIGS. 3C and 3D aregraphs showing a surface height change scanned with the atomic forcemicroscope by about 4.7 μm in one direction.

FIG. 4A is a cross sectional view of a GaN containing HEMT according toa second embodiment, and FIGS. 4B and 4C are graphs showing recovery ofa drain current after being driven at a high frequency in a sample ofthe second embodiment, and leak current between adjacent HEMT's.

FIG. 5 is a graph collectively showing the measurement results ofrelation between skewness Rsk of an AlN layer surface and drift(recovery) time after interruption of a high frequency signal.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

One of the present assignees has proposed a method of growing an AlNlayer on an SiC layer at a growth temperature of 1100° C. to 1200° C.and forming a GaN containing HEMT device layer on the AlN layer. The GaNcontaining HEMT formed by this growth method has demonstrated thephenomenon that a drain current reduces after interruption of a highfrequency signal and the device recovers not readily. The presentinventors assumed that the cause of this phenomenon was carrier trapcenters (traps) by crystal detects, and tried to develop a growth methodof forming less crystal detects.

FIG. 1A is a schematic cross sectional view showing the structure of aGaN containing HEMT according to the first embodiment of the presentinvention. Nitride semiconductor crystal layers are laminated on asingle crystal SiC substrate 100 by using a low pressure (LP) metalorganic chemical vapor deposition (MOCVD) system of vertical gas flow.Lamination layer forming process will be described hereunder. First, anSiC substrate 100 subjected to a surface cleaning process is placed in agrowth system which is controlled to have a constant pressure of 50 Torrby an evacuation pump system while hydrogen is flowed through the growthsystem. The substrate is heated to a temperature of 1150° C. in ahydrogen gas atmosphere and left for 10 minutes. Thermal cleaning of thesubstrate can be expected by this process. Next, a valve is turned overto flow trimethylaluminum (TMA) and ammonium (NH₃) gas into the reactionchamber to form an i-type AlN layer 102 x. A ratio of a TMA molarconcentration to an ammonium molar concentration, a so-called V/IIIratio, was set to 3000. At this ratio, a film forming speed of the AlNlayer was about 0.2 nm/sec. A film forming speed is generally determinedby a TMA molar concentration. However, the film forming speed of the AlNlayer is influenced also by an ammonium molar concentration, a growthtemperature and a growth pressure, because TMA forms an intermediateproduct depending upon ammonium and a growth temperature. Processparameters such as a growth speed and a V/III ratio are preferablyselected so as to grow perfect crystal, forming as less carrier trapcenters (traps) as possible, not pursuing flatness of a growth surface.This epitaxial growth is hereinafter called high temperature, high V/IIIratio (HT-HR) epitaxial growth.

After the AlN layer is grown to about 30 nm, the valve is turned over tostop the flow of TMA gas and the substrate temperature is loweredlinearly to 1050° C. In this case, the ammonium flow rate may be changedto a flow rate suitable for growing the next GaN layer. After 5 minutesof a temperature stabilizing time, trimethylgallium (TMG) gas is flowedto form an i-type GaN layer 105 of 2 μm thick as an electron transportlayer. Next, an i-type Al_(0.3)Ga_(0.7)N layer 110 of 3 nm thick isformed by using mixture gas of TMA and TMG, and an Si doped n-typeAl_(0.3)Ga_(0.7)N layer 111 of 15 nm is formed by supplying additionalsilane SiH₄. Lastly, an n-type GaN protective layer 114 is grown byusing TMG.

A growth temperature of the AlN layer 102 x having a preferablethickness range of 20 nm to 40 nm is higher than a growth temperature of1050° C.±50° C. of GaN to be later grown, and more specifically, atemperature of 1100° C. to 1200° C. is preferable. At the same time, ahigh V/III ratio is very important to obtain a low trap center density,and a V/III ratio of higher than 500 would be necessary. The V/III ratiois preferably set in a range about 1000 to 8000. There poses no problemif the growth pressure is in a range of 50 Torr to 300 Torr.

Triethylaluminum (TEA), tritertiarybutyl aluminum (TTBA) or the like maybe used as Al source gas, and dimethylhydrazine (DMHy) or the like maybe used as nitrogen source gas. Instead of hydrogen, nitrogen or mixturegas of hydrogen and nitrogen may be used as carrier gas.

For growth of the GaN layer, trimethylgallium (TMG) is used as Ga sourcegas, NH₃ is used as nitrogen source gas, and H₂ gas is used as carriergas. Instead, triethylgallium (TEG), dimethylhydrazine or the like mayalso be used as source gas. The i-type GaN layer 105 having a preferablethickness range of 1 μm to 3 μm serves as the channel layer or electrontransport layer of the GaN containing HEMT.

An Al composition x of the i-type Al_(x)Ga_(1-x)N layer 110 and n-typeAl_(x)Ga_(1-x)N layer 111 is selected to realize a desired deviceperformance, and is designed in a range of x=0.1 to 1.0. A totalthickness is properly designed in a range of about 5 nm to 50 nm inaccordance with the selected composition. The i-type AlGaN layer 110serves as a spacer layer, and the n-type AlGaN layer 111 serves as acarrier supply layer.

Si is suitable for donor of the n-type AlGaN layer, and doped at acarrier concentration of 1×10¹⁸ cm⁻³ to 5×10¹⁸ cm⁻³. Doping sourcematerial may be silane, disilane, triethylsilane or the like. These twoAlGaN layers are not essential but one of them may be omitted if desiredelectric characteristics can be achieved.

An n-type GaN cap layer 114 of 2 nm to 8 nm thick is formed on alamination of the AlGaN layers 110 and 111 by MOCVD. The n-type GaNlayer gives a suitable Schottky barrier height to the gate electrode.With these processes, an epitaxial substrate for the GaN containing HEMTis formed.

By using a resist mask, the n-type GaN cap layer 114 in the regionswhere source/drain electrodes are to be formed is etched and removed. Asource electrode 116 and a drain electrode 118 of a Ti/Al lamination areformed on the n-type AlGaN layer 111 by lift-off. For example, the lowerTi layer has a thickness of 20 nm, and the upper Al layer has athickness of 200 nm. The length of the shorter side of the source/drainelectrodes 116 and 118 is 1 μm to 2 μm, and the length of the longerside is designed on the basis of device characteristics. Thesource/drain electrodes are alloyed with the lower nitride semiconductorby a thermal alloying process to form ohmic electrodes connected totwo-dimensional electron gas in the i-type GaN layer 105.

An SiN layer 120 of 10 nm to 100 nm thick is deposited by plasma CVD orphoto-assisted CVD. A resist film is coated, and an opening is formedtherethrough in a gate electrode forming region, by lithography using anelectron beam or light. The SiN layer 120 is dry etched, and a gateelectrode 124 of an Ni/Au lamination is formed on the n-type GaN caplayer 114 by lift-off. For example, the lower Ni layer is 10 nm thick,and the upper Au layer is 300 nm thick. The length of the shorter sideof the gate electrode is designed in a range of 0.1 μm to 3 μm inaccordance with desired device characteristics.

A trench is formed to an intermediate depth of the i-type GaN layer 105by dry etching, surrounding each HEMT element for isolation of eachelement.

With these processes, a GaN containing HEMT is formed.

FIG. 1B is a schematic cross sectional view of a GaN containing HEMT ofthe comparative example. Description will be made mainly on differentpoints from the first embodiment shown in FIG. 1A. Nitride semiconductorcrystal layers are laminated on a single crystal SiC substrate 100 byusing a low pressure (LP) metal organic chemical vapor deposition(MOCVD) system of vertical gas flow type. These processes will bedescribed hereunder.

First, an SiC substrate 100 subjected to a surface cleaning process isplaced in a growth system which is controlled to have a constantpressure of 135 Torr by an evacuation pump system while hydrogen isflowed through the growth system. The substrate is heated to atemperature of 1200° C. in a hydrogen gas atmosphere and left for 10minutes. Thermal cleaning of the substrate can be expected by thisprocess. Next, a valve is turned over to flow trimethylaluminum (TMA)and ammonium (NH₃) gas into the reaction chamber to form an i-type AlNlayer 102 y. A ratio of a TMA molar concentration to an ammonium molarconcentration, a so-called V/III ratio, was set to 230. At this ratio, afilm forming speed of the AlN layer 102 y was about 0.2 nm/sec. Thisfilm forming speed is accidentally coincident with that of theembodiment, by the interaction of a variety of parameters.

In the comparative example, process parameters such as a growth speedand a V/III ratio are selected by paying attention to the flatness of agrowth surface. For example, a relatively thick film is formed becauseas an AlN film thickness becomes thicker, flatness becomes better. Inthe comparative example, a thickness was set to 100 nm. Other structuresare similar to those of the first embodiment.

Samples of the first embodiment and the comparative example having agate width (longer side) of 1 mm were formed. The source electrode 116was grounded, 50 V was applied to the drain electrode, a d.c. gate biasvoltage was set to obtain a drain current of about 10 mA, and a verysmall a.c. signal of 2 GHz was applied to the gate electrode. Anamplified a.c. signal is detected from the drain. For example, at aninput signal level of 16 dB to 18 dB, an output signal of 36 dB to 38 dBis obtained. After an a.c. signal has been superposed upon a d.c. gatebias, only the a.c. signal was interrupted.

FIGS. 2A and 2B are graphs showing an example of a drain current changeafter interruption of an a.c. signal of the samples of the firstembodiment and comparative example. The ordinate represents a ratio of adrain current Ids after interruption of an a.c. signal to a draincurrent Ids-BEFORE before application of an a.c. signal, and theabscissa represents a time after interruption of an a.c. signal in theunit of second. In the comparative example shown in FIG. 2B, a draincurrent of 10 mA before application of an a.c. signal reduces to about 1mA to 4 mA, and thereafter gradually recovers in 1 to 4 minutes. Afterinterruption of an a.c. signal, a transient response time of one minuteor longer is required, which is a critical obstacle against highfrequency on/off operations. In the state that a high frequency signalis applied at a drain bias of 50 V, a voltage of about 150 V at themaximum is applied in HEMT. This state is considered as a high voltageand high electric field state having a broadened depletion layer. It isconsidered that two-dimensional electron gas is captured in traps andcannot move because of the high voltage and high electric field, aquantity of the two-dimensional electron gas is reduced under the gateelectrode and the current reduces, and thereafter electrons aregradually released from the traps to gradually recover the current. Inthe sample of the first embodiment shown in FIG. 2A, reduction in thedrain current after interruption of an a.c. signal is suppressed toabout 10%, and the drain current recovers in about 5 to 15 seconds.Although not perfect, considerable improvement is achieved as comparedto the characteristics shown in FIG. 2B.

In order to investigate this phenomenon, crystalline states of the AlNlayers 102 x and 102 y formed under different film forming conditionswere investigated. FIGS. 3A and 3B are images showing the surfacemorphology of respective areas of 5 μm×5 μm observed with an atomicforce microscope. FIGS. 3C and 3D are graphs showing surface heightchanges respectively scanned with the atomic force microscope by about4.7 μm in one direction. The surface of the AlN layer 102 x of thesample of the first embodiment shown in FIGS. 3A and 3C has unevennessconstituted of a number of projections projecting from the lower side tothe upper side, uniformly distributed on the whole surface (in thiscross section, there are observed seven especially sharp edgedprojection). Each projection has a width narrower than 200 nm and has asharp top edge. Relative to an average height, a height of the convexportion is about 6 nm at the maximum, and a height of the concaveportion is less than 3 nm. It is characteristic that a number ofprojections exist extending mainly upwards from the average height.

The surface of the AlN layer 102 y of the sample of the comparativeexample shown in FIGS. 3B and 3D has many plateaus or flat top portions,having a width of 200 nm or wider including among others a plateau orflat top portion having a width of 1000 nm or wider. Relative to anaverage height, a height of the upwardly convex portion is 2 nm at themaximum. Only three remarkable valley or concave portions exist in thiscross section, including some valleys or concave portions reaching adepth of 10 nm. It is characteristic that relatively broad plateaus orflat top portions exist and deep valleys or holes are formed extendingdownwards from the plateau or flat top portion.

As compared to the sample of the comparative example, it can be saidthat the sample of the first embodiment is characterized in no plateauor protrusion having a width of 200 nm or wider, a number of projectionsor convex portions having a height of 3 nm or higher relative to theaverage height, and a depth of the concave portions being smaller than 3nm relative to the average height.

It is preferable to use an index of Rsk (skewness of a roughness curve)or Psk (skewness of a cross sectional curve) as a mathematical indexrepresentative of a difference between two types of surface roughness. Askewness is a physical quantity (absolute number) obtained by dividingan average of cubic of height deviation Z(x) along a reference length bycubic of root mean square of height deviation Z(x).

Calculation results are Rsk=+0.84 for the first embodiment, andRsk=−2.95 for the comparative example.

The surface morphology having a positive Rsk indicates existence ofrough surface portions (mainly convex portions) sharply projectingupwards, and the surface morphology having a negative Rsk indicatesexistence of rough surface portions (mainly concave portions) sharplyfalling or depressing downwards. The skewness Rsk is preferablypositive, and more preferably 0.5 or higher.

The uneven surface portions can obviously be observed not only justafter the AlN layers 102 x and 102 y are formed, but also afterepitaxial growth on the AlN layer or after completion of the devicestructure through cross section observation evaluation. The uneven orrough portions can also be detected through non-destructive diffractionintensity evaluation using X-rays. For example, a ratio of a diffractionintensity of an AlN thin film having the same thickness relative to adiffraction intensity of a GaN layer, is considerably lower for the AlNlayer having a large roughness than for the AlN layer having a smallroughness.

The comparative example reduces the drain current greatly afterapplication of a high frequency signal, although the flatness of thesurface of the AlN layer is definitely superior to that of the firstembodiment. This phenomenon may be ascribed to that the number ofcarriers decreases because two-dimensional electrons are trapped, andthat it takes a time for carriers to be released from traps. Somelattice defects may be considered as the cause of forming these traps.

In the first embodiment, a growth temperature for the AlN layer 102 x israised and a V/III ratio is set very high, by ignoring the flatnessdegree of the AlN surface, which degree has been regarded heretofore asan optimization index. It can be considered that this arrangement candrastically reduce the number of trap centers (crystal defects) in theAlN layer. It can also be considered that the number of trap centers canbe reduced in a region grown at the initial growth stage of a GaN filmformed on the AlN layer having the large roughness. In other words, theunderlying layer having large roughness is effective for reducing trapcenters in GaN. As a result, in the structure that an AlN layer and anitride semiconductor layer are epitaxially grown on a single crystalsubstrate, roughness is larger at the interface between the AlN layerand nitride semiconductor layer than at the interface between the AlNlayer and single crystal substrate. Further, the projections or convexportions are higher at the interface between the AlN layer and nitridesemiconductor layer than at the interface between the AlN layer andsingle crystal layer.

It can be understood that it is preferable to epitaxially grow an AlNlayer having large roughness at HT-HR, at least for a GaN containingHEMT for high voltage operation.

Although the GaN containing HEMT of the first embodiment exhibits anexcellent performance with a short transient response, it has been foundthat there arises a problem when a plurality of devices are integrated.

FIG. 2C is a graph showing the monitored results of a current flowingbetween two GaN containing HEMT's isolated by an isolation trench, whena voltage up to 100 V is applied between a drain of one HEMT and asource of the other HEMT. For preventing the elements from being burntout, a current value is limited at 10⁻³ A. Leak current increasesabruptly even at a small applied voltage, and reaches 10⁻³ A even at anapplied voltage lower than 10 V. Current flows between adjacentelements, and high resistance isolation cannot be obtained. Anotherproblem is that even a single element cannot be turned off completely bya gate voltage.

The reason of this leak current may be ascribed to that while the i-typeGaN layer 105 is grown on the AlN layer 102 x having large roughness,lateral growth occurs to bury the irregular portions. During this GaNlateral growth, impurities such as Si are likely to be mixed so thatcrystal resistance lowers.

FIG. 4A is a cross sectional view of a GaN containing HEMT according tothe second embodiment. By a process similar to the first embodiment, onan SiC substrate 100, an AlN layer 102 x of 20 nm to 40 nm thick isepitaxially grown at HT-HR. An AlGaN layer 104 whose Al composition isadjusted to 7 at % is grown on the AlN layer at a growth temperature of1050±50° C., and thereafter an i-type GaN layer 105 is grown. Athickness of the AlGaN layer 104 is preferably 10 nm to 200 nm, and inthis embodiment, is set to 100 nm. The AlGaN layer can easily have ahigher resistivity than that of the GaN layer, because of a broadenedband gap and the like. The i-type GaN layer 105 and other layers to beformed thereafter have the structures similar to those of the firstembodiment.

FIGS. 4B and 4C show a measured drain current recovery after beingdriven at a high frequency in a sample of the second embodiment, andleak current between adjacent HEMT's. The measuring method is the sameas that used for FIGS. 2A to 2C. The drain current recoverycharacteristics shown in FIG. 4B are approximately equal to those shownin FIG. 2A. The leak current shown in FIG. 4C exceeds 10⁻⁶ A at anapplied voltage of several volts, and thereafter increases gently. Theleak current even at an applied voltage of 100 V is at a level of 10⁻⁵A. Improvement by about two digits is achieved as compared to thecharacteristics shown in FIG. 2C. Isolation resistance of a practicallevel is thus obtained.

In the second embodiment, although AlGaN having an Al composition of 7at % is used as the leak current preventing high resistance layer, asimilar high resistance effect is expected by using Al_(x)Ga_(1-x)N(0<x≦0.1) (in the notation of Al composition by at %, 0 at %<Alcomposition≦10 at %). If the Al composition is low, the high resistanceeffect is small. Conversely, if the Al composition is made too large tothe same degree as that of AlGaN of the current supply layer of HEMT orthe like, a thermal conductivity lowers and the element characteristicsmay adversely be affected. This is the reason why the upper limit of Alcomposition exists.

In place of the AlGaN layer, an Fe-doped GaN layer may be used. In FIG.4A, after the AlN layer 102 x is epitaxially grown at a hightemperature, first, an Fe-doped GaN layer 104 is grown under the GaNgrowth condition, and thereafter the i-type GaN layer is grown. Fesource may be ferrocene. The GaN layer 104 doped with Fe at 1×10¹⁷ cm⁻³to 1×10¹⁹ cm⁻³ is grown to a thickness of 10 nm to 200 nm and connectedto the i-type GaN layer 105. In this case, a thickness of the i-type GaNlayer was set to 2.5 μm for fear that Fe may be diffused upward.

The present inventors conducted crystal growth of the AlN layer undervarious conditions and investigated a relation between a skewness of anAlN layer surface and a drift (recovery) time after interruption of ahigh frequency signal.

FIG. 5 is a graph collectively showing the experimental results on therelation of the drift (recovery) time after interruption of highfrequency signal with the skewness of the surface of the AlN layer. Theabscissa represents a skewness Rsk, and the ordinate represents a drifttime in the unit of sec. Rsk changes from about −3 to about 1 (1.2). Inthe range where the skewness is −3 to 0, the recovery time shortens asthe absolute value of the skewness reduces. A recovery time is shorterin the range of a positive skewness than in the negative skewness range.As the surface morphology takes more an upward projection state, Rsk hasa larger positive value. It can be seen that as Rsk has a largerpositive value, recovery of a transient phenomenon is speeded up. It isseen that in the range of 0 to about 0.4, as the skewness becomes large,the recovery time is shortened distinctly. It is also seen that in therange of 0 to about 1, as the skewness Rsk increases, the drift time isshortened, and as Rsk exceeds about 1, the drift time maintains almostconstant. It is therefore preferable to set Rsk not smaller than 0.5,and it is expected that a sufficiently short transient response can beobtained stably if Rsk is set to 1.0 or larger. However, present filmforming technologies may not realize a skewness Rsk larger than about1.5. It can therefore be said that a practical upper limit of theskewness is 1.5.

The present invention has been described in connection with thepreferred embodiments. The invention is not limited only to the aboveembodiments. It will be apparent to those skilled in the art that othervarious modifications, improvements, combinations, and the like can bemade.

1. A semiconductor epitaxial substrate comprising: a single crystalsubstrate; an AlN layer epitaxially grown on said single crystalsubstrate; a nitride semiconductor layer epitaxially grown on said AlNlayer; a first device layer of nitride semiconductor epitaxially grownon said nitride semiconductor layer; and a second device layer ofnitride semiconductor epitaxially grown on said first device layer,wherein an interface between said AlN layer and said nitridesemiconductor layer has a larger roughness than an interface betweensaid single crystal substrate and said AlN layer, wherein a skewness Rskof an upper surface of said AlN layer is positive, wherein said firstdevice layer is a channel layer, said second device layer is a carriersupply layer, and said nitride semiconductor layer has a higherresistivity than said first device layer, and wherein said singlecrystal substrate is SiC.
 2. The semiconductor epitaxial substrateaccording to claim 1, wherein said nitride semiconductor layer is anAl_(x)Ga_(1-x)N (where 0.0<x≦0.1) layer having a thickness in a range of10 nm to 200 nm.
 3. The semiconductor epitaxial substrate according toclaim 1, wherein said nitride semiconductor layer is a GaN layer havinga thickness in a range of 10 nm to 200 nm, said GaN layer being dopedwith Fe at a concentration in a range of 1×10¹⁷cm⁻³ to 1×10¹⁹cm⁻³.
 4. Amanufacture method for a semiconductor epitaxial layer comprising:epitaxially growing an AlN layer on a single crystal substrate; andepitaxially growing a nitride semiconductor layer on said AlN layer,wherein growth conditions for said AlN layer are set in such a mannerthat an interface between said AlN layer and said nitride semiconductorlayer has a larger roughness than an interface between said singlecrystal substrate and said AlN layer, wherein the growth conditions forsaid AlN layer include a growth temperature of 1100° C. to 1200° C. anda V/III ratio larger than 500, wherein said nitride semiconductor layeris an Al_(x)Ga_(1-x)N (where 0.0<x≦0.1) layer having a thickness in arange of 10 nm to 200 nm, or a GaN layer having a thickness in a rangeof 10 nm to 200 nm, said GaN layer being doped with Fe at aconcentration in a range of 1×10¹⁷cm⁻³ to 1×10¹⁹cm⁻³, and wherein askewness Rsk of an upper surface of said AlN layer is positive.
 5. Themanufacture method for a semiconductor epitaxial layer according toclaim 4, further comprising epitaxially growing a device layer on saidnitride semiconductor layer.